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Abstract Extending the coherence lifetime of a qubit is central to the implementation and deployment of quantum technologies, particularly in the solid state where various noise sources intrinsic to the material host play a limiting role. This study examines theoretically the coherent spin dynamics of a hetero‐spin system formed by a spin featuring a non‐zero crystal field and in proximity to a paramagnetic center . An analysis of the energy level structure of the dyad shows this system exhibits apair of levels separated by a magnetic‐field‐insensitive energy gap, which can be exploited to create long‐lived zero‐quantum coherences. It is found that these coherences are selectively sensitive to “local”—as opposed to “global”—magnetic field fluctuations, suggesting these spin dyads can serve as a nanoscale gradiometer for precision magnetometry. On the other hand, the distinct response of either spin species to electric or thermal stimuli allows one to implement alternative sensing protocols for magnetic‐noise‐free electrometry and thermometry. 

Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies. 

Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far have the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence microscopy at variable temperatures to study a new class of point defects produced via cerium ion implantation in thin hBN flakes. We find that, to a significant fraction, emitters show bright room-temperature emission, and good optical stability suggesting the formation of Ce-based point defects. Using density functional theory (DFT) we calculate the emission properties of candidate emitters, and single out the CeV_Bcenter—formed by an interlayer Ce atom adjacent to a boron vacancy—as one possible microscopic model. Our results suggest an intriguing route to defect engineering that simultaneously exploits the singular properties of rare-earth ions and the versatility of two-dimensional material hosts. 

Abstract Two‐dimentional magnets are of significant interest both as a platform for exploring novel fundamental physics and for their potential in spintronic and optoelectronic devices. Recent bulk magnetometry studies have indicated a weak ferromagnetic response in tungsten disulfide (WS₂), and theoretical predictions suggest edge‐localized magnetization in flakes with partial hydrogenation. Here, room‐temperature wide‐field quantum diamond magnetometry to image pristine and Fe‐implanted WS₂flakes of varying thicknesses (45–160 nm), exfoliated from bulk crystals and transferred to NV‐doped diamond substrates, is used. Direct evidence of edge‐localized stray magnetic fields, which scale linearly with applied external magnetic field (4.4–220 mT), reaching up to ±4.7 µT, is observed. The edge signal shows a limited dependence on the flake thickness, consistent with dipolar field decay and sensing geometry. Magnetic simulations using five alternative models favor the presence of edge magnetization aligned along an axis slightly tilted from the normal to the WS₂flake's plane, consistent with spin canting in antiferromagnetically coupled edge states. Thses findings establish WS₂as a promising platform for edge‐controlled 2D spintronics. 

Color centers in wide bandgap semiconductors are attracting broad attention for use as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers’ response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously assign to the cubic phase using spectrally resolved Raman imaging. These isolated spots show photoluminescence (PL) spectra with zero-phonon lines (ZPLs) within the visible region (496–700 nm) when subject to sub-bandgap laser excitation. Second-order autocorrelation of the emitted photons reveals antibunching withg²(0) ∼ 0.2, and a decay constant of 2.75 ns that is further confirmed through fluorescence lifetime measurements. The results presented herein prove the existence of optically addressable isolated quantum emitters originating from defects in cBN, making this material an interesting platform for opto-electronic devices and quantum applications.